 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio 3 MMBV3102LT1 22 pF(Nominal) 30Volts VOLTAGE VARIABLE CAPACITANCE DIODES 3 CATHODE 1 ANODE 1 2 CASE 318-08, STYLE 8 SOT- 23 (TO-236AB) MAXIMUM RATINGS Rating Reverse Voltage Forward Current Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 30 200 225 1.8 +125 -55 to +150 Unit Vdc mAdc mW mW/C C C DEVICE MARKING MMBV3102LT1= M4C ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10Adc) Reverse Voltage Leakage Current (V R=15Vdc) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz) Symbol V (BR)R IR T CC Min 30 -- -- Typ -- -- 300 Max -- 0.1 -- Unit Vdc Adc ppm/C C T Diode Capacitance V R =3.0Vdc,f=1.0MHz pF Device Type MMBV3102LT1 Min 20 Q,Figure of Merit V R =3.0Vdc f=50MHz C R ,Capacitance Ratio C 3/ C 25 f=1.0MHz Min 4.5 Nom 22 Max 25 Min 200 Typ 4.8 MMBV3102LT1-1/2 LESHAN RADIO COMPANY, LTD. MMBV3102LT1 TYPICAL CHARACTERISTICS 40 20 10 C T , DIODE CAPACITANCE (pF) 36 T A = 25C f = 50MHz Q , FIGURE OF MERIT 32 28 24 20 16 12 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0 3.0 6.0 9.0 12 15 18 21 24 27 30 f = 1.0MHz T A = 25C V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( GHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T ,DIODE CAPACITANCE(NORMALIZED) 100 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 I R , REVERSE CURRENT ( nA) V R= 3.0Vdc f = 1.0MHz 10 V R= 20Vdc 1.0 0.1 0.01 0.001 -60 -20 0 +20 +60 +100 +140 T A , AMBIENT TEMPERATURE (C) T A , AMBIENT TEMPERATURE (C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING ANG SPECIFICATIONS 1. C R is the ratio of C T measured at 3.0 Vdc divided by C T measured at 25 Vdc. MMBV3102LT1-2/2 |
Price & Availability of MMBV3102
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |